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EBE21UE8AEFB Datasheet 2GB Unbuffered DDR2 SDRAM DIMM

Manufacturer: Elpida Memory

Datasheet Details

Part number EBE21UE8AEFB
Manufacturer Elpida Memory
File Size 284.28 KB
Description 2GB Unbuffered DDR2 SDRAM DIMM
Datasheet download datasheet EBE21UE8AEFB Datasheet

Overview

PRELIMINARY DATA SHEET www.DataSheet4U.com 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8AEFB (256M words × 64 bits, 2 Ranks) Specifications • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (RoHS compliant) (EBE21UE8AEFB-xx-E)  Lead-free (RoHS compliant) and Halogen-free (EBE21UE8AEFB-xx-F) • Power supply: VDD = 1.8V ± 0.1V • Data rate: 800Mbps/667Mbps (max.) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5, 6 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.