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EBE11FD8AGFN Datasheet 1GB Fully Buffered DIMM

Manufacturer: Elpida Memory

Download the EBE11FD8AGFN datasheet PDF. This datasheet also includes the EBE11FD8AGFD variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (EBE11FD8AGFD_ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EBE11FD8AGFN
Manufacturer Elpida Memory
File Size 225.78 KB
Description 1GB Fully Buffered DIMM
Datasheet download datasheet EBE11FD8AGFN Datasheet

Overview

PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Fully Buffered DIMM EBE11FD8AGFD EBE11FD8AGFN Specifications • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/−0.045 • Data rate: 667Mbps/533Mbps (max.) • Four internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.

Key Features

  • JEDEC standard Raw Card B Design.
  • Industry Standard Advanced Memory Buffer (AMB).
  • High-speed differential point-to-point link interface at 1.5V (JEDEC draft spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes.
  • Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator.
  • Channel error detection a.