The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
S DM8401
J UNE 21, 2005 ver1.3
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID R DS (ON) ( m W ) Max
30V 7.6A
20 @ VGS = 10V 40 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S -30V
ID -5.3A
R DS (ON) ( m W ) Max
45 @ VGS = -10V 60 @ VGS = -4.5V
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS 30 -30
V
Gate-S ource Voltage
VGS 20 20
V
Drain C urrent-C ontinuous a @ TJ=25 C -P ulsed b
ID 7.6 -5.3 IDM 30 -20
A A
Drain-S ource Diode Forward C urrent a
IS 1.7 -1.7 A
Maximum P ower Dissipation a
PD 2.
SDM8401 Datasheet
