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OP299 - GaAlAs Plastic Infrared Emitting Diode

Description

The OP294 and OP299 are gallium arsenide infrared emitting diodes designed for low current or power limited applications (such as battery supplies).

Features

  • Characterized at 5mA for battery operated systems or other low drive current systems.
  • Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299).
  • Significantly higher power output than GaAs at equivalent drive currents.
  • Wavelength matched to silicon’ s peak response.
  • T-1 3/4 package Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage.
  • .

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Datasheet preview – OP299

Datasheet Details

Part number OP299
Manufacturer ETC
File Size 226.22 KB
Description GaAlAs Plastic Infrared Emitting Diode
Datasheet download datasheet OP299 Datasheet
Additional preview pages of the OP299 datasheet.

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Other Datasheets by ETC
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Full PDF Text Transcription

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Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features • Characterized at 5mA for battery operated systems or other low drive current systems • Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299) • Significantly higher power output than GaAs at equivalent drive currents • Wavelength matched to silicon’ s peak response • T-1 3/4 package Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Peak Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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