Datasheet4U Logo Datasheet4U.com

ISS133 - Switching diode

Features

  • 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ. ) 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.2 ROHM : MSD EIAJ :.
  • JEDEC : DO-34 !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175.
  • 65~.

📥 Download Datasheet

Datasheet preview – ISS133

Datasheet Details

Part number ISS133
Manufacturer ETC
File Size 82.78 KB
Description Switching diode
Datasheet download datasheet ISS133 Datasheet
Additional preview pages of the ISS133 datasheet.

📁 Similar Datasheet

  • ISS104 - Fast Switching Rectifiers (WEJ)
  • ISS128 - (ISSxxx) Diode (Toshiba)
  • ISS154 - (ISSxxx) Diode (Toshiba)
  • ISS181 - (ISSxxx) Diode (Toshiba)
  • ISS184 - (ISSxxx) Diode (Toshiba)
  • ISS226 - (ISSxxx) Diode (Toshiba)
  • iSSI20R02H - coreless transformer (Infineon)
  • iSSI20R03H - coreless transformer (Infineon)
  • iSSI20R11H - coreless transformer (Infineon)
  • iSSI30R11H - coreless transformer (Infineon)
Other Datasheets by ETC

    Full PDF Text Transcription

    Click to expand full text
    www.DataSheet4U.com 1SS133 Diodes Switching diode 1SS133 !Applications High speed switching !External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 2.7±0.3 29.0±1.0 φ1.8±0.
    Published: |