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SILICON PLANAR HIGH SPEED SWITCHING DIODES
I
HD2A HD3A HD4A
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage
Forward Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range
VR IF
P
T O T
75
100
V
mA mW
o
330
–55 to + 1 5 0
tj:tstg
c
ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise stated)
PARAMETER Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL MIN. MAX. UNIT CONDITIONS
V BR
85
0.5 0.715 1.0 1.0 60 4
Typ.