EPA480C-SOT89
Features
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- LOW COST SURFACE-MOUNT PLASTIC PACKAGE +36d Bm TYPICAL OUTPUT POWER 13.0d B TYPICAL POWER GAIN AT 2GHz 0.5d B TYPICAL NOISE FIGURE AT 2GHz +43d Bm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz
- 0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE
- Si3N4 PASSIVATION
- ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY Applications
- Analog and Digital Wireless System
- High Dynamic Range LNA
- HPA
DC-6GHz High Efficiency Heterojunction Power FET
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(Top View) All Dimensions In Mils
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1d B G1d B PAE NF PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f = 2GHz Vds=8V, Ids=750m A Gain at 1d B pression f = 2GHz Vds=8V, Ids=750m A Power Added Efficiency at 1d B pression Vds=8V, Ids=750m A f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=300m A Vds=5-8V, Ids=750m A Output 3rd Order Intercept...
