EPA120E
Excelics
DATA SHEET
- -
- -
- - +29.5d Bm TYPICAL OUTPUT POWER 9.5d B TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 30m A PER BIN RANGE
830 50 116 D D D
High Efficiency Heterojunction Power FET
48 320
95 45 80 Chip Thickness: 75 ± 13 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1d B G1d B PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1d B pression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=3.5m A -12 -7 MIN 28.0 10.0 TYP 29.5 29.5 12.0 9.5 46 210 240 360 380 -1.0 -15 -14 35 o
UNIT d Bm d B %
510 m A m...
