EPA060B-70
Features
- NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
- +26d Bm TYPICAL OUTPUT POWER
- 9.0d B TYPICAL POWER GAIN AT 12 GHZ
- 0.4 d B TYPICAL NOISE FIGURE AT 2GHz
- 20 d B TYPICAL ASSOCIATED GAIN AT 2 GHz
- 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
- Si3N4 PASSIVATION
- ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY
High Efficiency Heterojunction Power FET
'
0LQ $OO /HDGV
- Applications
- High Dynamic Range LNA
- DC to 18 GHz
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1d B G1d B PAE IP3 NF GA Idss Gm Vp BVgd BVgs PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Gain at 1d B pression f=2GHz Vds=6V, Ids=50% Idss f=12GHz Power Added Efficiency at 1d B pression f=2GHz Vds=6V, Ids=50% Idss f=12GHz +5d Bm POUT/Tone (5V/50m A) f=2GHz (5V/90m A) Noise Figure (5V/50m A) f=2GHz (5V/90m A) Associated Gain (5V/50m A) f=2GHz (5V/90m A)...
