EPA018BV
Excelics
DATA SHEET
High Efficiency Heterojunction Power FET
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- - VERY HIGH fmax: 120GHz +20.0d Bm TYPICAL OUTPUT POWER 13.0d B TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.75d B NOISE FIGURE AND 12.5d B ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND VIA HOLE GROUNDING ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 5 m A PER BIN RANGE
: Via Hole Chip Thickness: 75 ± 13 microns All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1d B G1d B PAE NF Ga Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Gain at 1d B pression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1d B pression Vds=6V, Ids=50% Idss f=12Ghz Noise Figure f=12GHz Vds=2V, Ids=15m A Associated Gain f=12GHz Vds=2V, Ids=15m A Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown...
