Datasheet Details
| Part number | 4X16E83V |
|---|---|
| Manufacturer | Unknown Manufacturer |
| File Size | 598.34 KB |
| Description | 4 MEG x 16 EDO DRAM |
| Datasheet |
 4X16E83V Datasheet
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General Description
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.
The device is functionally organized as 4,194,304 locations containing 16 bits each.
Key Features
- Single +3.3V ±0.3V power supply.
- Industry-standard x16 pinout, timing, functions, and package.
- 12 row, 10 column addresses (4) 13 row, 9 column addresses (8).
- High-performance CMOS silicon-gate process.
- All inputs, outputs and clocks are LVTTL-compatible.
- Extended Data-Out (EDO) PAGE MODE access.
- 4,096-cycle CAS#-BEFORE-RAS# (CBR).