4N600 - N-Channel MOSFET

Product Overview

Datasheet Details

Part number	4N600
Manufacturer	ETC
File Size	36.81 KB
Description	N-Channel MOSFET
Datasheet	4N600 Datasheet
Additional preview pages of the 4N600 datasheet.

Product details

Description

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.

Features

Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 600V RDS (ON) = 1.9 Ω ID = 4.0A Ordering Information Device 4N600T 4N600S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID (TC=25°C) ID (TC=100°C) VGSV PD TJ TSTG Parameter Drain Current -Conti.

📁 Similar Datasheet

4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
4N60-C - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N60-CB - N-CHANNEL MOSFET (UTC)
4N60-E - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N60-N - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N60-Q - N-CHANNEL POWER MOSFET (UTC)
4N60-R - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N60-S - N-CHANNEL POWER MOSFET (Unisonic Technologies)

Other Datasheets by ETC

Published: Oct 18, 2005 |