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2N5798 - SILICON P-CHANNEL JUNCTION FET

Download the 2N5798 datasheet PDF. This datasheet also covers the 2N5797 variant, as both devices belong to the same silicon p-channel junction fet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5797-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5798
Manufacturer Unknown Manufacturer
File Size 211.54 KB
Description SILICON P-CHANNEL JUNCTION FET
Datasheet download datasheet 2N5798 Datasheet

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Other Datasheets by Unknown Manufacturer

Part Number Description
2N5797 SILICON P-CHANNEL JUNCTION FET
2N5799 SILICON P-CHANNEL JUNCTION FET
2N5716 SILICON LOW NOISE N-CHANNEL JUNCTION FET
2N5717 SILICON LOW NOISE N-CHANNEL JUNCTION FET
2N5718 SILICON LOW NOISE N-CHANNEL JUNCTION FET

Full PDF Text Transcription

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2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Field·Effect Transistors de· signed primarily for low-power, audio amplifier applications. • Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi • Drain and Source Interchangeable • Low Gate Reverse Current - IGSS = 1.0 nAdc (Maxi • Unibloc Plastic Package Encapsulation P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS *MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC Derate above 25°C Operating and Storage Junction Temperature Range "'Indicates JEDEC Registered Data. Symbol VOS VOG VGSR IGF Po TJ,TsIg Value 40 40 40 10 350 2.
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