Datasheet4U Logo Datasheet4U.com

2N5558 - SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

This page provides the datasheet information for the 2N5558, a member of the 2N5556 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS family.

📥 Download Datasheet

Datasheet preview – 2N5558

Datasheet Details

Part number 2N5558
Manufacturer ETC
File Size 116.08 KB
Description SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Datasheet download datasheet 2N5558 Datasheet
Additional preview pages of the 2N5558 datasheet.

📁 Similar Datasheet

  • 2N5558 - n-channel JFET (Siliconix)
  • 2N555 - PNP germanium power transistors (Motorola)
  • 2N5550 - Amplifier Transistor (ON Semiconductor)
  • 2N5550 - Silicon NPN Transistor (NTE)
  • 2N5550 - Amplifier Transistors (Motorola)
  • 2N5550 - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • 2N5550 - NPN high-voltage transistors (Philips)
  • 2N5550 - SILICON NPN TRANSISTORS (CENTRAL SEMICONDUCTOR)
  • 2N5550 - NPN Transistor (SeCoS)
  • 2N5550 - NPN Epitaxial Silicon Transistor (Fairchild Semiconductor)
Other Datasheets by ETC
  • 2N5556 - SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
  • 2N5557 - SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
  • 2N5013 - 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
  • 2N5014 - 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
  • 2N5015 - 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
  • 2N5016 - NPN SILICON RF POWER TRANSISTOR
  • 2N5032 - NPN SILICON RF SMALL SIGNAL TRANSISTORS
  • 2N5058S - NPN SILICON ANNULAR TRANSISTORS

Full PDF Text Transcription

Click to expand full text
2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ • Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz • Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) • Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS TYPE A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Deviee Dissipation @TA = 25'C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG(f) PD TJ Tstg Value Unit 30 Vdc 30 Vdc 30 Vdc 10 mAde 300 2.0 .
Published: |