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2N5557 - SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

This page provides the datasheet information for the 2N5557, a member of the 2N5556 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS family.

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Datasheet Details

Part number 2N5557
Manufacturer ETC
File Size 116.08 KB
Description SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
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2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ • Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz • Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) • Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS TYPE A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Deviee Dissipation @TA = 25'C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG(f) PD TJ Tstg Value Unit 30 Vdc 30 Vdc 30 Vdc 10 mAde 300 2.0 .
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