Datasheet Details
| Part number | E50N06 |
|---|---|
| Manufacturer | ESTEK |
| File Size | 179.84 KB |
| Description | Power MOSFET |
| Datasheet |
 E50N06 Datasheet
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| Part number | E50N06 |
|---|---|
| Manufacturer | ESTEK |
| File Size | 179.84 KB |
| Description | Power MOSFET |
| Datasheet |
E50N06 Datasheet
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Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 60V ID25 = 50A RDS(ON) = 0.
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