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M14D2561616A-2.5BG2S - 4M x 16 Bit x 4 Banks DDR II SDRAM

Download the M14D2561616A-2.5BG2S datasheet PDF. This datasheet also covers the M14D2561616A variant, as both devices belong to the same 4m x 16 bit x 4 banks ddr ii sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

Ball Name A0~A12, BA0,BA1 DQ0~DQ15 RAS CAS WE VSS VDD DQS, DQS (LDQS, LDQS UDQS, UDQS) ODT NC Function Address inputs - Row address A0~A12 - Column address A0~A8 A10/AP : Auto Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-out Command input Command input Command input Ground Power Bi-dir

Key Features

  • JEDEC Standard.
  • VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V.
  • Internal pipelined double-data-rate architecture; two data access per clock cycle.
  • Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
  • On-chip DLL.
  • Differential clock inputs (CLK and CLK ).
  • DLL aligns DQ and DQS transition with CLK transition.
  • 1KB page size - Row address: A0 to A12 - Column address: A0 to A8.
  • Quad bank operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M14D2561616A-ESMT.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT DDR II SDRAM M14D2561616A (2S) 4M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.