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ELM65103A-S - Single P-channel MOSFET

General Description

ELM65103A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=-30V.
  • Id=-4.5A (Vgs=-10V).
  • Rds(on) = 41mΩ (Vgs=-10V).
  • Rds(on) = 60mΩ (Vgs=-4.5V).
  • Maximum absolute ratings Parameter Symbol Drain-source voltage Vds Gate-source voltage Vgs Continuous drain current Ta=25°C Ta=70°C Id Pulsed drain current Idm Power dissipation Tc=25°C Tc=75°C Pd Junction and storage temperature range Tj, Tstg NOTE : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surfa.

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Datasheet Details

Part number ELM65103A-S
Manufacturer ELM
File Size 596.05 KB
Description Single P-channel MOSFET
Datasheet download datasheet ELM65103A-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single P-channel MOSFET ELM65103A-S ■General description ELM65103A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=-30V • Id=-4.5A (Vgs=-10V) • Rds(on) = 41mΩ (Vgs=-10V) • Rds(on) = 60mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Drain-source voltage Vds Gate-source voltage Vgs Continuous drain current Ta=25°C Ta=70°C Id Pulsed drain current Idm Power dissipation Tc=25°C Tc=75°C Pd Junction and storage temperature range Tj, Tstg NOTE : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board. Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±20 V -4.