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ELM54599CWA-N - Complementary MOSFET

General Description

ELM54599CWA-N

Key Features

  • http://www. elm-tech. com ELM54599CWA-N uses advanced trench.
  • N-channel technology to provide excellent Rds(on) and low gate charge. Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V).
  • P-channel Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V).
  • Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junctio.

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Datasheet Details

Part number ELM54599CWA-N
Manufacturer ELM
File Size 1.40 MB
Description Complementary MOSFET
Datasheet download datasheet ELM54599CWA-N Datasheet

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Full PDF Text Transcription (Reference)

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Complementary MOSFET ■General Description ELM54599CWA-N ■Features http://www.elm-tech.com ELM54599CWA-N uses advanced trench • N-channel technology to provide excellent Rds(on) and low gate charge. Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V) • P-channel Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj,Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 40 -40 V ±20 ±20 V 8.0 6.0 -7.2 -6.2 A 25 -25 A 2.8 1.8 2.8 1.