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ELM544539A-N - Complementary MOSFET

General Description

ELM544539A-N

Key Features

  • http://www. elm-tech. com ELM544539A-N uses advanced trench technology.
  • N-channel to provide excellent Rds(on) and low gate charge. Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V).
  • P-channel Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V).
  • Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and stor.

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Datasheet Details

Part number ELM544539A-N
Manufacturer ELM
File Size 1.25 MB
Description Complementary MOSFET
Datasheet download datasheet ELM544539A-N Datasheet

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Complementary MOSFET ■General Description ELM544539A-N ■Features http://www.elm-tech.com ELM544539A-N uses advanced trench technology • N-channel to provide excellent Rds(on) and low gate charge. Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V) • P-channel Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj,Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 30 -30 V ±20 ±20 V 5.4 -5.4 A 4.0 -4.2 20 -30 A 2.8 2.8 W 1.8 1.