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ELM53993A-S - Dual P-channel MOSFET

Key Features

  • ELM53993A-S uses advanced trench technology to.
  • Vds=-30V provide excellent Rds(on), low gate charge and low gate.
  • Id=-3.6A threshold voltage.
  • Rds(on)=150mΩ (Vgs=-10V).
  • Rds(on)=235mΩ (Vgs=-4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs.

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Datasheet Details

Part number ELM53993A-S
Manufacturer ELM
File Size 861.08 KB
Description Dual P-channel MOSFET
Datasheet download datasheet ELM53993A-S Datasheet

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Dual P-channel MOSFET ELM53993A-S http://www.elm-tech.com ■General description ■Features ELM53993A-S uses advanced trench technology to • Vds=-30V provide excellent Rds(on), low gate charge and low gate • Id=-3.6A threshold voltage. • Rds(on)=150mΩ (Vgs=-10V) • Rds(on)=235mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit -30 V ±20 V -3.6 A -3.0 -15 A 2.0 W 1.3 150 °C -55 to 150 °C ■Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max.