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ELM4P6115FDA-N - Single P-channel MOSFET

Key Features

  • ELM4P6115FDA-N uses advanced trench technology.
  • Vds=-60V to provide excellent Rds(on), low gate charge and low.
  • Id=-35A (Vgs=-10V) gate threshold voltage.
  • Rds(on)=25mΩ (Vgs=-10V).
  • Rds(on)=33mΩ (Vgs=-4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-10V) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Sto.

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Datasheet Details

Part number ELM4P6115FDA-N
Manufacturer ELM
File Size 1.38 MB
Description Single P-channel MOSFET
Datasheet download datasheet ELM4P6115FDA-N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single P-channel MOSFET ELM4P6115FDA-N https://www.elm-tech.com ■General description ■Features ELM4P6115FDA-N uses advanced trench technology • Vds=-60V to provide excellent Rds(on), low gate charge and low • Id=-35A (Vgs=-10V) gate threshold voltage. • Rds(on)=25mΩ (Vgs=-10V) • Rds(on)=33mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-10V) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit -60 ±20 -35 -27 -70 113 47.6 52.