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ELM4P2607FAA-S - Single P-channel MOSFET

Key Features

  • ELM4P2607FAA-S uses advanced trench technology to.
  • Vds=-20V provide excellent Rds(on), low gate charge and low gate.
  • Id=-6.9A (Vgs=-4.5V) threshold voltage.
  • Rds(on) = 30mΩ (Vgs=-4.5V).
  • Rds(on) = 38mΩ (Vgs=-2.5V).
  • Rds(on) = 55mΩ (Vgs=-1.8V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-4.5V) Pulsed drain current Total power dissipation Storage temperature range Operating junct.

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Datasheet Details

Part number ELM4P2607FAA-S
Manufacturer ELM
File Size 857.94 KB
Description Single P-channel MOSFET
Datasheet download datasheet ELM4P2607FAA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single P-channel MOSFET ELM4P2607FAA-S https://www.elm-tech.com ■General description ■Features ELM4P2607FAA-S uses advanced trench technology to • Vds=-20V provide excellent Rds(on), low gate charge and low gate • Id=-6.9A (Vgs=-4.5V) threshold voltage. • Rds(on) = 30mΩ (Vgs=-4.5V) • Rds(on) = 38mΩ (Vgs=-2.5V) • Rds(on) = 55mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-4.5V) Pulsed drain current Total power dissipation Storage temperature range Operating junction temperature range Ta=25°C Ta=70°C Ta=25°C Symbol Vds Vgs Id Idm Pd Tstg Tj Limit -20 ±12 -6.9 -5.4 -20 1.