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ELM4C3909FBA-S - Complementary MOSFET

General Description

ELM4C3909FBA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • N-channel.
  • Vds=30V.
  • Id=3.8A(Vgs=4.5V).
  • Rds(on) = 60mΩ(Vgs=10V).
  • Rds(on) = 65mΩ(Vgs=4.5V).
  • Rds(on) = 85mΩ(Vgs=2.5V) https://www. elm-tech. com P-channel.
  • Vds=-30V.
  • Id=-2.3A(Vgs=-4.5V).
  • Rds(on) = 115mΩ(Vgs=-10V).
  • Rds(on) = 145mΩ(Vgs=-4.5V).
  • Rds(on) = 200mΩ(Vgs=-2.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=4.5) Ta=25°C Ta=70°C Pulsed.

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Datasheet Details

Part number ELM4C3909FBA-S
Manufacturer ELM
File Size 1.72 MB
Description Complementary MOSFET
Datasheet download datasheet ELM4C3909FBA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary MOSFET ■General description ELM4C3909FBA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. ELM4C3909FBA-S ■Features N-channel • Vds=30V • Id=3.8A(Vgs=4.5V) • Rds(on) = 60mΩ(Vgs=10V) • Rds(on) = 65mΩ(Vgs=4.5V) • Rds(on) = 85mΩ(Vgs=2.5V) https://www.elm-tech.com P-channel • Vds=-30V • Id=-2.3A(Vgs=-4.5V) • Rds(on) = 115mΩ(Vgs=-10V) • Rds(on) = 145mΩ(Vgs=-4.5V) • Rds(on) = 200mΩ(Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=4.5) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj N-ch (Max.) 30 ±12 3.8 3.0 16 1.