Datasheet4U Logo Datasheet4U.com

SE1N - HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE

Features

  • :.
  • Glass passivated junction chip.
  • High surge current capability.
  • High reliability.
  • Low reverse current.
  • Fast recovery time.
  • Pb Free / RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number SE1N
Manufacturer EIC
File Size 134.86 KB
Description HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE
Datasheet download datasheet SE1N Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SE1000W Transimpedance Amplifier SiGe Semiconductor Inc.
SE1003 Light Emitting Diode NEC
SE1010W Transimpedance Amplifier SiGe Semiconductor Inc.
SE1020W Transimpedance Amplifier SiGe Semiconductor Inc.
SE1030W Transimpedance Amplifier SiGe Semiconductor Inc.

Other Datasheets by EIC

Part Number Description

Full PDF Text Transcription

Click to expand full text
www.eicsemi.com SE1N HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE PRV : 1200 Volts Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High surge current capability * High reliability * Low reverse current * Fast recovery time * Pb Free / RoHS Compliant MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-0 rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) 5.65 5.35 4. 6 4. 2 SMA 2.3 2.1 1.5 1.1 0.2 0.27 2.5 0.13 2.9 2.1 2.5 2.1 1.7 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified.
Published: |