• Part: GE1S-G
  • Description: HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 34.81 KB
Download GE1S-G Datasheet PDF
EIC Semiconductor
GE1S-G
FEATURES : - Glass passivated junction chip - High surge current capability - High reliability - Low reverse current - Fast recovery time - Pb Free / Ro HS pliant MECHANICAL DATA : - Case : DO-215AC Molded plastic - Epoxy : UL94V-0 rate flame retardant - Polarity : Color band denotes cathode end - Mounting position : Any - Weight : 0.060 gram (Approximately) DO-215AC 4.3 ± 0.2 2.6 ± 0.2 2.4 ± 0.2 6.2 ± 0.2 1.4 ± 0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Ta = 75°C at 8.3 ms Single Half sine-wave Maximum Non-Repetitive Peak Forward Surge Current Maximum Peak Forward Voltage at IF = 0.5 A Maximum DC Reverse Current TJ = 25 °C at Rated DC Blocking Voltage TJ = 100 °C Reverse Recovery Time (Note 1) Operating Junction Temperature Range Storage...