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BY550-50G - GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES

Key Features

  • :.
  • Glass passivated chip.
  • High current capability.
  • High surge current capability.
  • High reliability.
  • Low reverse current.
  • Low forward voltage drop.
  • Pb / RoHS Free 0.208 (5.30) 0.188 (4.80) 1.00 (25.4) MIN. 0.374 (9.50) 0.283 (7.20).

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Datasheet Details

Part number BY550-50G
Manufacturer EIC
File Size 97.46 KB
Description GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES
Datasheet download datasheet BY550-50G Datasheet

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BY550-50 SILICON RECTIFIER DIODES
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.eicsemi.com BY550-50G ~ BY550-1000G PRV : 50 - 1000 Volts Io : 5.0 Amperes GLASS PASSIVATED JUNCTION SILICON RECTIFIER DIODES DO - 201AD FEATURES : * Glass passivated chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free 0.208 (5.30) 0.188 (4.80) 1.00 (25.4) MIN. 0.374 (9.50) 0.283 (7.20) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams 0.052 (1.33) 0.048 (1.23) 1.00 (25.4) MIN.