• Part: BAV70W
  • Description: Silicon Epitaxial Planar Switching Diode
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 529.45 KB
Download BAV70W Datasheet PDF
EIC Semiconductor
BAV70W
Features - Fast switching diode - Ultra small surface mount package SOT-323 Dimensions in millimeters Absolute Maximum Ratings (Ta = 25 OC) Parameter Non-Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Single diode loaded Double diode loaded Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IF IFRM IFSM Ptot Tj Tstg Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 1 m A at IF = 10 m A at IF = 50 m A at IF = 150 m A Reverse Leakage Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 m A to IR = 10 m A, Irr = 0.1 IR, RL = 100 Ω Symbol...