• Part: 1SS226
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 261.09 KB
Download 1SS226 Datasheet PDF
EIC Semiconductor
1SS226
FEATURES : - Small package - Low forward voltage - Fast reverse recovery time - Small total capacitance - Ultra high speed switching application - Pb / Ro HS Free SILICON EPITAXIAL PLANAR DIODE SOT-23 1.40 0.95 0.50 0.35 0.19 0.08 0.100 0.013 3.10 2.70 1.65 1.20 3.0 2.2 MECHANICAL DATA : - Case : SOT-23 plastic Case - Marking Code : A7 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Parameter Maximum Peak Reverse Voltage Reverse Voltage Maximum Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IFM IF(AV) IFSM PD TJ TSTG Value 85 80 300 100 2 350 150 -55 to +150 Unit V V m A m A A m W °C °C Thermal Characteristics Parameter...