• Part: 1N5807US
  • Description: ULTRAFAST RECOVERY RECTIFIER DIODES
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 166.08 KB
Download 1N5807US Datasheet PDF
EIC Semiconductor
1N5807US
FEATURES : - High current capability - High surge current capability - High reliability - Low reverse current - Low forward voltage drop - Ultrafast recovery time - Pb / Ro HS Free MECHANICAL DATA : - Case : SMB Molded plastic - Epoxy : UL94V-0 rate flame retardant - Lead : Lead Formed for Surface Mount - Polarity : Color band denotes cathode end - Mounting position : Any - Weight : 0.1079 gram 5.30 ± 0.22 4.65 ± 0.30 1.14 ± 0.38 0.1 ± 0.1 2.1 ± 0.15 3.62 ± 0.32 0.22 ± 0.07 2.28 ± 0.15 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RATING Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 100µA Maximum Average Forward Current Maximum Forward Surge Current (3) Maximum Peak Forward Voltage at IF = 4.0 A. Maximum Reverse Current at VRWM Ta = 25 °C Ta = 100 °C Maximum Reverse Recovery Time (4) Thermal Resistance, Junction to Lead Junction Temperature Range Storage...