• Part: 1N4448
  • Description: HIGH SPEED SWITCHING DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 28.31 KB
Download 1N4448 Datasheet PDF
EIC Semiconductor
1N4448
FEATURES : - High switching speed: max. 4 ns - Reverse voltage:max. 75V - Peak reverse voltage:max. 100 V - Pb / Ro HS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current (1) Half Wave Rectification with Resistive Load , f ≥ 50 Hz Maximum Surge Forward Current at t < 1s , Tj = 25°C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range VRM VR IF IF(AV) IFSM PD TJ TS Note : (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature Value 100 75 200 0.5 500 175 -65 to +...
1N4448 reference image

Representative 1N4448 image (package may vary by manufacturer)