• Part: 1N4152
  • Description: HIGH SPEED SWITCHING DIODE
  • Category: Diode
  • Manufacturer: EIC Semiconductor
  • Size: 154.73 KB
Download 1N4152 Datasheet PDF
EIC Semiconductor
1N4152
FEATURES : - High switching speed: max. 4 ns - Peak reverse voltage:max. 40 V - Pb / Ro HS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted) Parameter Maximum Peak Reverse Voltage Maximum Average Forward Current Maximum Non-repetitive Peak Forward Surge Current at tp = 1s at tp =1 µs Thermal Resistance Junction to Ambient Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Symbol VRM IF(AV) IFSM RӨJA PD TJ TSTG Value 40 150 1.0 4.0 300 500 175 -65 to + 200 Electrical Characteristics (Ta = 25 °C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Reverse Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery...