ZC018PG
Description
：
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
：
1) VDS=-30V,ID=-35A,RDS(ON) <18mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation.
D DDD
S S1
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol VDS VGS
IDM EAS IAS PD TJ, TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current-TC=25℃ Continuous Drain Current-TC=100℃ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Power Dissipation-TC=25℃4 Operating and Storage Junction Temperature Range
Ratings -30 ±20 -35 -20 -65 72.2 -38 29
-55 to +150
Thermal Characteristics：
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case 1
.doingter.cn
- 1-
Units V V
A m J A W ℃
Units...
