DC003NG-E
Description
：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
：
1) VDS=30V,ID=150A,RDS(ON)<3.3mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol VDS VGS
IDM PD EAS TJ, TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current-TC=25℃ Continuous Drain Current-TC=100℃ Pulsed Drain Current 1 Power Dissipation Single pulse avalanche energy 2 Operating and Storage Junction Temperature Range
Ratings 30
±20 150 98 600 108 225 -55 to +150
Thermal Characteristics：
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case
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- 1-
Units V V A A A W m J ℃
Units ℃/W
Package Marking and Ordering...
