Datasheet4U Logo Datasheet4U.com

ZXTPS717MCTA - 12V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION

Download the ZXTPS717MCTA datasheet PDF. This datasheet also covers the ZXTPS717MC variant, as both devices belong to the same 12v pnp low saturation transistor and 1a schottky diode combination family and are provided as variant models within a single manufacturer datasheet.

Features

  • PNP Transistor.
  • BVCEO > -12V.
  • IC = -4A Continuous Collector Current.
  • Low Saturation Voltage (-140mV max @ -1A).
  • RSAT = 65mΩ for a low equivalent On-Resistance.
  • hFE characterized up to -10A for high current gain hold up Schottky Diode.
  • BVR > 40V.
  • IFAV = 3A Average Peak Forward Current.
  • Low VF < 500mV (@1A) for reduced power loss.
  • Fast switching due to Schottky barrier.
  • Low profile 0.8mm high package for thin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ZXTPS717MC-Diodes.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
ZXTP19020CFF PNP medium power transistor Zetex Semiconductors
ZXTP19060CFF PNP medium power transistor Zetex Semiconductors
ZXTP19060CZ 60V PNP medium transistor Zetex Semiconductors
ZXTP19060CZTA 60V PNP medium transistor Zetex Semiconductors
ZXTP19100CFF PNP medium power transistor Zetex Semiconductors

Other Datasheets by Diodes Incorporated

Part Number Description
ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
ZXTPS718MCTA 20V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
ZXTPS720MCTA 40V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION

Full PDF Text Transcription

Click to expand full text
Features and Benefits PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage (-140mV max @ -1A) • RSAT = 65mΩ for a low equivalent On-Resistance • hFE characterized up to -10A for high current gain hold up Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier • Low profile 0.8mm high package for thin applications • RθJA efficient, 40% lower than SOT26 • 6mm2 footprint, 50% smaller than TSOP6 and SOT26 • Lead-Free, RoHS Compliant (Note 1) • Halogen and Antimony Free.
Published: |