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ZXTNS618MCTA - 20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION

Download the ZXTNS618MCTA datasheet PDF. This datasheet also covers the ZXTNS618MC variant, as both devices belong to the same 20v npn low saturation transistor and 1a schottky diode combination family and are provided as variant models within a single manufacturer datasheet.

Features

  • NPN Transistor.
  • BVCEO > 20V.
  • IC = 4.5A Continuous Collector Current.
  • Low Saturation Voltage (150mV max @ 1A).
  • RSAT = 47mΩ for a low equivalent On-Resistance.
  • hFE characterized up to 6A for high current gain hold up Schottky Diode.
  • BVR > 40V.
  • IFAV = 3A Average Peak Forward Current.
  • Low VF < 500mV (@1A) for reduced power loss.
  • Fast switching due to Schottky barrier Low profile 0.8mm high package for thin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ZXTNS618MC-Diodes.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Diodes Incorporated

Part Number Description
ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
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Full PDF Text Transcription

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Features and Benefits NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free.
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