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ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V) -30
RDS(on) (Ω) 0.012 @ VGS=-10V 0.018 @ VGS=-4.5V
ID(A) -17.1
Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection applications
Features • Low on-resistance • Low gate drive • SO8 package
Applications • Power management functions • Disconnect switches • Reverse battery protection
Ordering information
Device ZXMP3F35N8TA
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
500
SD SD SD GD
Top view
Device marking ZXMP 3F35
Issue 1 - August 2008
1
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© Diodes Incorporated 2008
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ZXMP3F35N8TA Datasheet
