G4812SS Datasheet N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

G4812SS n-channel enhancement mode mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	G4812SS
Manufacturer	Diodes Incorporated
File Size	233.68 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	G4812SS Datasheet

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Overview

DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V(BR)DSS 30V RDS(on) 15mΩ @ VGS= 10V 18.5mΩ @ VGS= 4.5V ID max TA = +25°C 10.7A 9.

Key Features

DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:.
Low RDS(ON) - minimizes conduction losses.
Low VSD - reducing the losses due to body diode conduction.
Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses.
Low gate capacitance (Qg/Qgs) ratio.
reduces risk of shoot-through or cross conduction currents at high frequencies.
Avalanche rugged.
IAR an.

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