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FZT751Q - PNP HIGH PERFORMANCE TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > -60V.
  • IC = -3A High Continuous Current.
  • ICM = -6A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < -300mV @ -1A.
  • Complementary NPN Type: FZT651Q.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH.

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEO > -60V • IC = -3A High Continuous Current • ICM = -6A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -300mV @ -1A • Complementary NPN Type: FZT651Q • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable (Note 4) A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Applications • Automotive Lighting • MOSFET and IGBT Gate Driving Mechanical Data • Case: SOT223 • Case Material: Molded Plastic. “Green” Molding Compound.