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FZT651Q - NPN HIGH PERFORMANCE TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > 60V.
  • IC = 3A High Continuous Current.
  • ICM = 6A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < 300mV @1A.
  • Complementary PNP Type: FZT751Q.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT223.
  • Case Material: Molded Plastic. “Green” Molding Compound;.
  • UL Flammability Rati.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications. Features  BVCEO > 60V  IC = 3A High Continuous Current  ICM = 6A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 300mV @1A  Complementary PNP Type: FZT751Q  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT223  Case Material: Molded Plastic.