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DMT6007LFG - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • Low RDS(ON).
  • Ensures On-State Losses are Minimized.
  • Excellent Qgd ×RDS(ON) Product (FOM).
  • Advanced Technology for DC-DC Converters.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area by enabling smaller end products.
  • 100% UIS (Avalanche) Rated.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards.

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Full PDF Text Transcription for DMT6007LFG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT6007LFG. For precise diagrams, tables, and layout, please refer to the original PDF.

ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT Green DMT6007LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 6mΩ @ VGS = 10V 8.5mΩ @ VGS = 4.5V ID Max...

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ummary BVDSS 60V RDS(ON) Max 6mΩ @ VGS = 10V 8.5mΩ @ VGS = 4.5V ID Max TC = +25°C 80A 70A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.