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DMN53D0L - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Package: SOT23 Package Material: Molded Plastic, “Gr

Key Features

  • N-Channel MOSFET.
  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.

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Other Datasheets by Diodes Incorporated

Part Number Description
DMN53D0LDW N-CHANNEL MOSFET
DMN53D0LDWQ 50V Dual N-CHANNEL MOSFET
DMN53D0LQ N-Channel MOSFET
DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR
DMN53D0LW N-CHANNEL MOSFET
DMN53D0U N-Channel MOSFET
DMN5010VAK DUAL N-CHANNEL MOSFET
DMN5040LSS 50V N-CHANNEL MOSFET
DMN55D0UT N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500mA 200mA Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.