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DMN3150LW - N-Channel MOSFET

Key Features

  • Low On-Resistance: RDS(ON) < 88mΩ @ VGS = 4.5V RDS(ON) < 138mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • SOT-323 NEW.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN3150LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • Low On-Resistance: RDS(ON) < 88mΩ @ VGS = 4.5V RDS(ON) < 138mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • SOT-323 NEW PRODUCT • • • • • • • Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.