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DMN3024SFG - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters Mec

Key Features

  • 100% Unclamped Inductive Switch (UIS) test in production.
  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Re.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) max 23mΩ @ VGS = 10V 33mΩ @ VGS = 4.5V ID max TA = 25°C 7.5A 6.3 A Features and Benefits • 100% Unclamped Inductive Switch (UIS) test in production • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.