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DMN3016LK3 - N-Channel MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting DC-DC Converters Power Management Functions Mechanical Data Cas

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • Low On-Resistance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID TC = +25°C 37.8A 32.8A Features  100% Unclamped Inductive Switch (UIS) Test in Production  Low On-Resistance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  DC-DC Converters  Power Management Functions Mechanical Data  Case: TO252  Case Material: Molded Plastic, “Green” Molding Compound.