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DMC1030UFDB - MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Low Profile, 0.6mm Max Height.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Other Datasheets by Diodes Incorporated

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMC1030UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 N-Channel Q2 P-Channel BVDSS 12V -12V RDS(ON) max 34mΩ @ VGS = 4.5V 40mΩ @ VGS = 2.5V 50mΩ @ VGS = 1.8V 70mΩ @ VGS = 1.5V 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V 215mΩ @ VGS = -1.5V ID MAX TA = +25°C 5.1A 4.7A 4.2A 3.6A -3.9A -3.3A -2.8A -2.0A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.