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BCX5316Q - PNP Transistor

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEO > -45V, -60V & -80V.
  • IC = -1A Continuous Collector Current.
  • ICM = -2A Peak Pulse Current.
  • Low Saturation Voltage VCE(SAT) < -500mV @ -0.5A.
  • Complementary NPN Types: BCX5616Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. "Green" Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT89.
  • Case Material: Molded Plastic, “Green” Molding C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEO > -45V, -60V & -80V  IC = -1A Continuous Collector Current  ICM = -2A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -500mV @ -0.5A  Complementary NPN Types: BCX5616Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Finish Leads.