TZX11B - 500mW EPITAXIAL PLANAR ZENER DIODE

Diodes Incorporated

Key Features

Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current A.

TZX11B 500mw epitaxial planar zener diode by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	TZX11B
Manufacturer	Diodes Incorporated
File Size	67.15 KB
Description	500mW EPITAXIAL PLANAR ZENER DIODE
Datasheet	TZX11B Datasheet

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Other Datasheets by Diodes Incorporated

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TZX2V4 - TZX36C 500mW EPITAXIAL PLANAR ZENER DIODE Features · · · Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current A PRELIMINARY B A Mechanical Data · · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.35 grams (approx.) DO-35 Dim A B C D Min 25.40 ¾ ¾ ¾ D C Max ¾ 4.00 0.60 2.00 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol ¾ @ IF = 200mA VF Pd RqJA Tj, TSTG Value ¾ 1.5 500 300 -65 to +175 Unit ¾ V mW K/W °C Characteristic Zener Current (See Table on page 2) Forward Voltage Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Notes: 1.