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DTQ6302-D - N-Channel MOSFET

Download the DTQ6302-D datasheet PDF. This datasheet also covers the DTQ6302-D-Din variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • DT-Trench Power MOSFET.
  • 100 % Rg and UIS Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTQ6302-D-Din-Tek.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTQ6302-D
Manufacturer Din-Tek
File Size 376.18 KB
Description N-Channel MOSFET
Datasheet download datasheet DTQ6302-D Datasheet

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Other Datasheets by Din-Tek

Part Number Description
DTQ6302 30V N-Channel MOSFET
DTQ6302E N-Channel MOSFET
DTQ6300 N-Channel MOSFET
DTQ6301 P-Channel MOSFET
DTQ6310 30V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel 30 V (D-S) MOSFET DTQ6302-D www.din-tek.jp PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0014 at VGS = 10 V 0.0020 at VGS = 4.5 V ID (A)a, e 135 110 Qg (Typ.) 82 nC FEATURES • DT-Trench Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • OR-ing • Server Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C ID TA = 25 °C TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.