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Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
DOB50N06P
D
Features：
1) VDS=60V,ID=50A,RDS(ON)<22mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation.
GS
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentContinuous Drain Current-TC=100℃ Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Operating and Storage Junction Temperature Range
Ratings 60
±20 50 35.
DOB50N06P Datasheet
